Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

被引：6
|
作者：
Talochkin, A. B. [1 ]
Cherkov, A. G. [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
NANOTECHNOLOGY | 2009年 / 20卷 / 34期
关键词：
SUPERLATTICES; NANOSTRUCTURES; SCATTERING; SI; RELAXATION; VIBRATIONS; ISLANDS; SI(001); STRAIN;
D O I：
10.1088/0957-4484/20/34/345702
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Spectra of Raman scattering by optical phonons of multilayer Si/Ge structures with Ge quantum dots (QDs) grown by means of low-temperature (T-s = 250 degrees C) molecular beam epitaxy are studied. Two types of Ge islands are observed: pseudomorphic to a Si matrix, and those in which the strains are relaxed non-uniformly. Application of polarization measurements allows us to separate the phonon lines corresponding to these two components of a QD array. A method for the quantitative estimation of the degree of uniformity of the QD array, determining the integrated electron-hole spectrum of the structure, is proposed.
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页数：5
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