Carrier transport mechanism of Al contacts on n-type 4H-SiC

被引：0

作者：

Kim, Seongjun ^{[1
]}

Kim, Hong-Ki ^{[1
]}

Jeong, Seonghoon ^{[2
]}

Kang, Min-Jae ^{[1
]}

Kang, Min-Sik ^{[1
]}

Lee, Nam-Suk ^{[1
]}

Tran Viet Cuong ^{[3
]}

Koo, Sang-Mo ^{[4
]}

Kim, Hyunsoo ^{[2
]}

Shin, Hoon-Kyu ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Natl Inst Nanomat Technol, Pohang, South Korea

[2] Chonbuk Natl Univ, Dept Semicond & Chem Engn, Jeonju, South Korea

[3] Nguyen Tat Thanh Univ, NTT Hitech Inst, 298-300 A Nguyen Tat Thanh St, Ho Chi Minh City, Vietnam

[4] Kwangwoon Univ, Dept Elect Mat Engn, Seoul, South Korea

来源：

MATERIALS LETTERS | 2018年 / 228卷

关键词：

SiC; Contacts; Transport mechanism; Non-alloying; Electrical properties;

D O I：

10.1016/j.matlet.2018.05.119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the carrier transport mechanism at Al/n-type 4H-SiC contacts. As-deposited Al exhibited the good ohmic behavior, while the thermal annealing leads the significant degradation of contact properties, i.e., the specific contact resistance was 3.97 x 10 (3), 4.1 x 10 (2), and 0.153 Omega cm(2) for the as-deposited, 200 and 400 degrees C-annealed condition, respectively. The ohmic mechanism of as-deposited contact could be explained by field emission model, yielding a tunneling parameter of 0.44 eV, i.e., the ohmic behavior is due to the tunneling through the thin barrier. The degradation of ohmic contact after thermal annealing caused by the formation of oxide layer between the Al and SiC. (C) 2018 Published by Elsevier B.V.

引用

页码：232 / 234

页数：3

共 50 条

[21] Carbon-cap for ohmic contacts on n-type ion implanted 4H-SiC
Nipoti, R.
Mancarella, F.
Moscatelli, F.
Rizzoli, R.
Zampolli, S.
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 504 - 507
[22] Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing
T. N. Oder
T. L. Sung
M. Barlow
J. R. Williams
A. C. Ahyi
T. Isaacs-Smith
Journal of Electronic Materials, 2009, 38 : 772 - 777
[23] The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC
Kim, BK
Burm, J
An, C
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 97 - 101
[24] Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC
Chang, SC
Wang, SJ
Uang, KM
Liou, BW
SOLID-STATE ELECTRONICS, 2005, 49 (12) : 1937 - 1941
[25] Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers
Kimoto, Tsunenobu
Hiyoshi, Toru
Hayashi, Toshihiko
Suda, Jun
JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)
[26] The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
Lilja, L.
Hassan, J.
Booker, I. D.
Bergman, J. P.
Janzen, E.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 161 - 164
[27] Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC
Capan, Ivana
Brodar, Tomislav
Yamazaki, Yuichi
Oki, Yuya
Ohshima, Takeshi
Chiba, Yoji
Hijikata, Yasuto
Snoj, Luka
Radulovic, Vladimir
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 478 (478): : 224 - 228
[28] Raman analysis of defects in n-type 4H-SiC
杨银堂
韩茹
王平
Chinese Physics B, 2008, 17 (09) : 3459 - 3463
[29] Raman analysis of defects in n-type 4H-SiC
School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
不详
Chin. Phys., 2008, 9 (3459-3463):
[30] Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature
He, Yanjing
Lv, Hongliang
Tang, Xiaoyan
Song, Qingwen
Zhang, Yimeng
Han, Chao
Guo, Tao
He, Xiaoning
Zhang, Yimen
Zhang, Yuming
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 805 : 999 - 1003

← 1 2 3 4 5 →