Susceptibility of PMOS Transistors under High RF Excitations at Source Pin

被引：0

作者：

Jovic, Ognjen ^{[1
]}

Stuermer, Uwe ^{[2
]}

Wilkening, Wolfgang ^{[1
]}

Baric, Adrijan ^{[3
]}

Maier, Christian ^{[1
]}

机构：

[1] Robert Bosch GmbH AE EIM, Gerlingen, Germany

[2] Fraunhofer SDI ASE, Aachen, Germany

[3] Univ Zagreb, Fac Elect Engn & Comp, Zagreb 41000, Croatia

来源：

2009 20TH INTERNATIONAL ZURICH SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work analyses the operation point shift of PMOS transistors at high electromagnetic interference levels. These devices are typically connected to supply rails of integrated circuits. In this configuration their source connections are subjected to RF disturbances. We provide measurement and simulation results of such interferences and their effects. The results reveal a complex behaviour at low frequencies when the power level is varied. This behaviour is caused by both non-linear characteristics of the intrinsic PMOS transistor and the turn-on of the parasitic drain-bulk diode at higher power levels. It is relevant up to RF frequencies of several hundred MHz.

引用

页码：101 / +

页数：2

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