High resolution silicon drift detector array designed for XAFS spectroscopy

We have analyzed the performances of an array of 6 silicon drift detectors with on chip integrated JFET's for XAFS spectroscopy. The key advantage of these detectors is that they combine a very good energy resolution together with high counting rates: at 150 K the energy resolution was 139 eV FWHM at 5.89 keV with a 5 mu s gaussian shaping time constant whereas it was still 152 eV FWHM for 0.5 mu s; time constant. Macrocyclic complexes of Ce (III) were used as test samples. We also explored whether or not the energy discrimination between the L-alpha, L-beta fluorescence Lines could allow us to get rid the unwanted L-II edge signature mat is spoiling the L-III edge EXAFS oscillations.