Thermal conductivity measurement of tungsten oxide nanoscale thin films

被引：32
|
作者：
Wang, Haitao [1 ]
Xu, Yibin
Goto, Masahiro
Tanaka, Yoshihisa
Yamazaki, Masayoshi
Kasahara, Akira
Tosa, Masahiro
机构：
[1] Natl Inst Mat Sci, Mat Database Stn, Tokyo 1530061, Japan
[2] Natl Inst Mat Sci, Mat Engn Lab, Tsukuba, Ibaraki 3050047, Japan
来源：
MATERIALS TRANSACTIONS | 2006年 / 47卷 / 08期
关键词：
tungsten oxide; thin film; nanoscale; thermal conductivity;
D O I：
10.2320/matertrans.47.1894
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The out-of-plane thermal conductivity of sputtered tungsten oxide thin films. with thickness of 100 to 300 nm was measured by two omega method based on a new analytical model with consideration of the interfacial thermal resistance between the films and the substrate. The influence of the tungsten oxide structure on the thermal conductivity was studied. The result reveals that the tungsten oxide thin films made with 10% reactive gas of oxygen had a mixed phase of WO2 and WO3, while those made with 100% oxygen were WO3 only. The thermal conductivity Of WO3 thin films is 1.63 Wm(-1) K-1, and that Of WO2/WO3 films is 1.28 Wm(-1) K-1. The difference is explained by a higher thermal resistance at the interface of WO, and WO3 crystals caused by the mismatch of phonon state.
引用
收藏
页码：1894 / 1897
页数：4
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