A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics

被引：22
|
作者：
Xu, HQ [1 ]
机构：
[1] Lund Univ, SE-22100 Lund, Sweden
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
three-terminal ballistic junctions; nonlinear transport; rectification; logic devices;
D O I：
10.1016/S1386-9477(02)00240-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A room-temperature electrical property of three-terminal ballistic junctions (TBJs) is predicted. For a symmetric TBJ. it is shown that when finite voltages F and -V are applied to the left and right branches. the voltage Output V, from the central branch will always be negative. This characteristic appears even when the symmetry in the TBJ is broken. provided that V! is larger than a threshold. Applications of these devices in nanoelectronics are proposed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：942 / 945
页数：4
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