Penta-Hexa-Graphene Nanoribbons: Intrinsic Magnetism and Edge Effect Induce Spin-Gapless Semiconducting and Half-Metallic Properties

被引:14
|
作者
Deng, Yuan-Xiang [1 ,2 ]
Chen, Shi-Zhang [4 ,5 ]
Zhang, Yong [3 ]
Yu, Xia [3 ]
Xie, Zhong-Xiang [3 ]
Tang, Li-Ming [2 ]
Chen, Ke-Qiu [2 ]
机构
[1] Hunan Inst Technol, Sch Elect Informat Engn, Hengyang 421002, Peoples R China
[2] Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Peoples R China
[3] Hunan Inst Technol, Dept Math & Phys, Hengyang 421002, Peoples R China
[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[5] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
spin-gapless semiconductor; half-metal; penta-hexa-graphene nanoribbon; magnetism; first-principles calculation;
D O I
10.1021/acsami.0c14768
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional materials with intrinsic long-range ordered magnetic moments have drawn a lot of attention. However, for practical applications, whether or not the magnetism is stable in their nanostructures has not been revealed. Here, based on the recently proposed magnetic penta-hexa-graphene, we study the electronic and magnetic properties of its nanoribbons (named PHGNRs). The results show that the PHGNRs have intrinsic robust magnetic moments that are different from zigzag graphene nanoribbons, where the magnetic moments caused by the edge effect are vulnerable. Moreover, the magnetic ground states, namely, ferromagnetic (FM) or antiferromagnetic (AFM), can be transformed by changing the width of PHGNRs. Most interestingly, under the FM ground state, the spin-polarized electronic properties reveal that the zigzag PHGNRs transform from spin-gapless semiconductors (SGSs) to half-metals, as the width of nanoribbons increases, while all the armchair PHGNRs are magnetic semiconductors. Furthermore, by considering different edge effects caused by the residual carbon atoms on the edges, the PHGNRs can further derive different types of SGSs, as well as halfmetals. Our work suggests that the PHGNRs possessing intrinsic robust magnetic moments have potential applications in the field of spintronic devices.
引用
收藏
页码:53088 / 53095
页数:8
相关论文
共 11 条
  • [1] Edge effect induce spin-gapless semiconducting and half-metallic properties of N-doped zigzag graphene nanoribbons
    Min, Jiewen
    Ou, Xingyuan
    Liu, Xiong
    Zou, Wenting
    Li, Zhaoting
    Deng, Liqin
    Deng, Yuanxiang
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2025, 167
  • [2] Perfect spin-filtering effect in molecular junctions based on half-metallic penta-hexa-graphene nanoribbons
    Deng, Yuan-Xiang
    Chen, Shi-Zhang
    Hong, Jun
    Jia, Pin-Zhen
    Zhang, Yong
    Yu, Xia
    Chen, Ke-Qiu
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2022, 34 (28)
  • [3] Spin gapless semiconductor and half-metal properties in magnetic penta-hexa-graphene nanotubes
    Deng, Yuan-Xiang
    Chen, Shi-Zhang
    Zeng, Yun
    Feng, Yexin
    Zhou, Wu-Xing
    Tang, Li-Ming
    Chen, Ke-Qiu
    ORGANIC ELECTRONICS, 2018, 63 : 310 - 317
  • [4] Semiconducting to Half-Metallic to Metallic Transition on Spin-Resolved Zigzag Bilayer Graphene Nanoribbons
    Guo, Yufeng
    Guo, Wanlin
    Chen, Changfeng
    JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (30): : 13098 - 13105
  • [5] First-Principles Forecast of Gapless Half-Metallic and Spin-Gapless Semiconducting Materials: Case Study of Inverse Ti2CoSi-Based Compounds
    Zhang, Liang
    Dong, Shengjie
    Du, Jiangtao
    Lu, Yi-Lin
    Zhao, Hui
    Feng, Liefeng
    APPLIED SCIENCES-BASEL, 2020, 10 (03):
  • [6] Ab Initio Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect
    Aull, T.
    Sasioglu, E.
    Hinsche, N. F.
    Mertig, I.
    PHYSICAL REVIEW APPLIED, 2022, 18 (03)
  • [7] Spin Seebeck effect and thermal properties of zigzag graphene nanoribbons with edge magnetism
    Li, Jing
    Niquet, Yann-Michel
    Delerue, Christophe
    PHYSICAL REVIEW B, 2023, 107 (24)
  • [8] Half-metallic quantum valley Hall effect in biased zigzag-edge bilayer graphene nanoribbons
    Lee, Kyu Won
    Lee, Cheol Eui
    PHYSICAL REVIEW B, 2017, 95 (08)
  • [9] Graphene-Like Linear Dispersion Spin-Gapless Ferromagnetic Half-Metallic in Two-Dimensional DJ Phase Perovskite Cs2M2X8
    Yang, Xiao-Xi
    Yan, Yi
    Li, Dan
    JOURNAL OF PHYSICAL CHEMISTRY C, 2025, 129 (04): : 2231 - 2240
  • [10] Tunable half-metallic properties and spin Seebeck effects in zigzag-edged graphene nanoribbons adsorbed with V atom or V-benzene compound
    Yang, X. F.
    Wang, H. L.
    Hong, X. K.
    Liu, Y. S.
    Feng, J. F.
    Wang, X. F.
    Zhang, C. W.
    Chi, F.
    Si, M. S.
    ORGANIC ELECTRONICS, 2015, 24 : 80 - 88