Graphene-Like Linear Dispersion Spin-Gapless Ferromagnetic Half-Metallic in Two-Dimensional DJ Phase Perovskite Cs2M2X8

被引:0
|
作者
Yang, Xiao-Xi [1 ]
Yan, Yi [1 ]
Li, Dan [1 ,2 ]
机构
[1] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China
[2] Beijing Jiaotong Univ, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2025年 / 129卷 / 04期
基金
中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; INTRINSIC FERROMAGNETISM; SCHEMES;
D O I
10.1021/acs.jpcc.4c07635
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Due to their unique electronic properties, rich regulatory properties, and excellent magnetic response characteristics, two-dimensional (2D) magnetic materials show tremendous application potential in logic computation, information storage, and other fields. However, their practical application has been severely limited by spin polarizability, low Curie temperature, and low magnetic anisotropy in the realm of room-temperature electronics. Therefore, to achieve intrinsic room-temperature ferromagnetism, finding and designing new 2D ferromagnetic materials with robust magnetic order and high Curie temperature has become a research hotspot. Here, through first-principles calculations, the 2D DJ phase Cs2M2X8 (M = Fe, Co, Mn, X = Br, Cl) perovskite is screened by introducing magnetic elements at the M position, and it is found that the 2D Cs2Mn2Br/Cl8 exhibits ferromagnetic half-metal properties. Its two spin channels display zero-gap metallicity and large-band gap semiconductor characteristics, with each Cs2Mn2Br/Cl8 primitive cell having a large magnetic moment of 8 mu B. Additionally, the Fermi surface exhibits 100% spin polarization, with neighboring bands displaying graphene-like linear dispersion and an ultrahigh Fermi velocity of 4.73 x 105 m/s, as well as a nodal line semimetal Fermi surface structure, demonstrating excellent transport characteristics in a single spin channel. Moreover, the Curie temperature of the 2D Cs2Mn2Br8 reaches up to 502.8 K, indicating its broad applicability in high-temperature spintronic devices.
引用
收藏
页码:2231 / 2240
页数:10
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