Preparation and characterization of CrN thin film by DC reactive magnetron sputtering

被引：21
|
作者：
Siriprom, W. [1 ,2 ]
Chananonnawathorn, C. [3 ]
Kongsriprapan, S. [1 ,2 ]
Teanchai, K. [2 ]
Herman [4 ]
Horprathum, M. [3 ]
机构：
[1] Kasetsart Univ, Fac Sci Si Racha, Si Racha Campus, Chon Buri 20230, Thailand
[2] Kasetsart Univ, Fac Sci Si Racha, Mat Sci & Appl Phys Res Unit, Si Racha Campus, Chon Buri 20230, Thailand
[3] Natl Elect & Comp Technol Ctr, Opt Thin Film Lab, Pathum Thani 12120, Thailand
[4] Inst Teknologi Bandung, Fac Math & Nat Sci, Bandung 40132, Indonesia
来源：
MATERIALS TODAY-PROCEEDINGS | 2018年 / 5卷 / 07期
关键词：
CrN; Sputtering; nitrogen partial pressure; morphology; COATINGS;
D O I：
10.1016/j.matpr.2018.04.087
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, the DC reactive magnetron sputtering were used to deposit the chromium nitride (CrN) thin films on silicon (100) wafers and 304-type stainless steels in argon-nitrogen gas mixture at room temperature. The effect of nitrogen partial pressure ratios [%\PN2 = PN2/(PN2+PAr)x100] on the microstructural were studied. The crystal structure of the prepared CrN films were analyst by X-ray diffraction. For the physical morphological analysis, atomic force microscopy and field-emission scanning electron microscopy were used. An element analysis of the CrN thin films were performed by energy dispersive X-ray spectroscopy (EDS). It was found that the deposition rate of the films increased with decreasing the nitrogen partial pressure ratio. The changes in crystal structures and morphological related with nitrogen partial pressure ratio were systematically investigated and discussed in this paper. (C) 2018 Elsevier Ltd. All rights reserved .
引用
收藏
页码：15224 / 15227
页数：4
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