The effect of optical radiation on the semiconductor conductivity in a thin-film ferroelectric-semiconductor structure

被引：2
|
作者：
Afanas'ev, VP [1 ]
Bulat, DY
Kaptelov, EY
Pronin, IP
机构：
[1] St Petersburg State Electrotech Univ, St Petersburg 197376, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 06期
关键词：
D O I：
10.1134/1.1773355
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the effect of optical radiation on the conductivity of a thin-film field-effect transistor based on a multilayer structure of the Si-SiO2-Pt-PZT-SnO2 - x-Pt type. Within the permissible radiation dose, the conducting channel exhibits a residual photoconductivity, with an optical data storage time of no less than 10(5) s. The effective quenching of the residual conductivity in the structure studied can be produced only by simultaneous action of an alternating electric field and the temperature. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：518 / 521
页数：4
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