Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy

被引：11

作者：

Nakamura, Daisuke ^{[1
]}

Kimura, Taishi ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 06期

关键词：

SILICON-CARBIDE; SINGLE-CRYSTALS; HYDRIDE; LAYERS; BULK;

D O I：

10.7567/APEX.11.065502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The material yield of Ga during GaN growth via halogen-free vapor-phase epitaxy (HF-VPE) was systematically investigated and found to be much higher than that obtained using conventional hydride VPE. This is attributed to the much lower process pressure and shorter seed-to-source distance, owing to the inherent chemical reactions and corresponding reactor design used for HF-VPE growth. Ultrahigh-yield GaN growth was demonstrated on a 4-in -diameter sapphire seed substrate. (C) 2018 The Japan Society of Applied Physics.

引用

页数：4

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