Contacts to GaAs, InP, and GaP for high-temperature and high-power applications

There is a significant interest in the area of improving high temperature stable contacts to m-V semiconductors. Two attractive materials that offer promise in this area are dysprosium phosphide (DyP) and dysprosium arsenide (DyAs). This paper reports the electrical characterization of MBE-grown DyP and DyAs on GaAs, Cap, and InP substrates. The characterization methods include Hall and I-V measurements. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01% and is stable in air with no sign of oxidation, even after months of ambient exposure. DyP forms Schottky contacts to n-GaAs, n- and p-GaP, and p-InP with barrier heights of 0.81, 0.9, 0.8, and 0.74 eV, respectively. DyP on n-InP and p-GaAs is found to have ohmic behavior with the specific contact resistance of 1x10(-4) and 2.9x10(-5) Ohm.cm(2), respectively. DyAs also forms Schottky contacts to n-GaAs, p-GaP, and p-InP and forms ohmic contacts to n-InP.