Dose Rate Effects on Bipolar Components

被引：0
|
作者：
Toscano, F. [1 ]
Ouellet, A. [2 ]
Tilhac, F. [3 ]
Lagarrigue, T. [3 ]
机构：
[1] STMicroelect Co, IMS R&D Dept, Stradale Primosole 50, I-95121 Catania, Italy
[2] STMicroelect Co, Burlington, MA 01803 USA
[3] Hirex Engn Co Alter Technol, TESTLAB Dept, F-31520 Ramonville St Agne, France
来源：
2013 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2013年
关键词：
Bipolar transistors; ELDRs; LDR; HDR; Radiation; TID;
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
The TID Co60 Dose rate effects have been examined in bipolar transistors at high and low dose rates. The aim of the radiation tests is to study the ELDRs on NPN and SPNP elementary transistors.
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收藏
页数：6
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