Influences of hydrogen damages in ferroelectric thin film capacitors

被引：0
|
作者：
Koo, JM [1 ]
Min, HS
Lee, WH
Lee, JB
Kim, JY
Ahn, JH
机构：
[1] Kookmin Univ, Dept Mat Engn, Seoul 136702, South Korea
[2] Hanyang Univ, Dept Engn Met, Seoul 133791, South Korea
来源：
FERROELECTRICS | 2001年 / 260卷 / 1-4期
关键词：
ferroelectric; forming gas; tetragonal; lattice parameters; binding energy;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
During the CMOS process, ferroelectric capacitors show degraded ferroelectric properties due to a hydrogen involving process. When hydrogen diffused in PZT thin films through noble metal electrodes (such as Pt, Ir), XRD data indicate a change of lattice parameters and XPS spectra exhibit a change of Pb-O bond in crystalline perovskite phase. Especially, the variation of lattice parameter of PZT (Zr/Ti=20/80) depends on the thickness of top electrodes (Pt).
引用
收藏
页码：623 / 628
页数：6
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