Modelling of leakage current in ferroelectric thin film capacitors

被引：0
|
作者：
Dawber, M [1 ]
Scott, JF [1 ]
机构：
[1] Univ Cambridge, Dept Earth Sci, Symetrix Ctr Ferro, Cambridge CB2 3EQ, England
来源：
FERROELECTRICS | 2001年 / 260卷 / 1-4期
关键词：
leakage current; thin films;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A complete understanding of the leakage current mechanism in ferroelectric thin film capacitors has remained elusive despite numerous experimental and theoretical studies. This paper does not claim to provide the solution but rather to clarify the issues that are still unresolved and need further attention. We discuss the similarities between observed leakage current curves and those for metal-semiconductor-metal punch-through diodes.
引用
收藏
页码：487 / 492
页数：6
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