Screw dislocation cross slip at cross-slip plane jogs and screw dipole annihilation in FCC Cu and Ni investigated via atomistic simulations
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作者:
Rao, S. I.
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UES Inc, Dayton, OH 45432 USA
Ecole Polytech Fed Lausanne, Inst Engn Mech, CH-1015 Lausanne, SwitzerlandAir Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USA
Rao, S. I.
[2
,5
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Dimiduk, D. M.
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BlueQuartz Software LLC, Springboro, OH 45066 USAAir Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USA
Dimiduk, D. M.
[3
]
El-Awady, J. A.
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Johns Hopkins Univ, Dept Mech Engn, Baltimore, MD 21218 USAAir Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USA
El-Awady, J. A.
[4
]
Parthasarathy, T. A.
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UES Inc, Dayton, OH 45432 USAAir Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USA
Parthasarathy, T. A.
[2
]
Uchic, M. D.
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Air Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USAAir Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USA
Uchic, M. D.
[1
]
Woodward, C.
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Air Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USAAir Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USA
Woodward, C.
[1
]
机构:
[1] Air Force Res Lab, Mat & Mfg Directorate, AFRL RXCM, Wright Patterson AFB, OH 45433 USA
[2] UES Inc, Dayton, OH 45432 USA
[3] BlueQuartz Software LLC, Springboro, OH 45066 USA
Using atomistic simulations, the effect of jogs on the cross-slip of screw character dislocations and screw-dipole annihilation was examined for both FCC Cu and Ni. The stress-free activation energy for cross-slip at jogs is close to 0.4 eV in Cu, determined using a nudged elastic band method. This value is a factor of 4- to-5 lower than the activation energy for cross-slip of screw dislocations in the absence of a jog. Similar results were obtained for Ni. Molecular dynamics simulations were used to study the annihilation of a jog-containing screw dipole. The critical Escaig stress on the glide plane for dipole annihilation drops quickly from the 0 K value of similar to 400 MPa and, dipole annihilation is nearly athermal at room temperature. At 5 K, Escaig stresses on the cross-slip plane are a factor of 1.5 less effective than Escaig stresses on the glide plane and, glide stresses on the cross-slip plane are a factor of 3 less effective for dipole annihilation by cross-slip. The activation volume for cross-slip of screw dislocations at jogs with respect to these three stress components range from 6 to 20b(3). These results have been found to be useful in physics-based modeling of bulk cross-slip in higher length scale 3D dislocation dynamics simulations investigating dislocation pattern formation and fatigue structures in FCC crystals. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
机构:
Shi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang,110016, ChinaShi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
Yan, J.X.
Zhang, Z.J.
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Shi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, ChinaShi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
Zhang, Z.J.
Li, K.Q.
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机构:
Shi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang,110016, ChinaShi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
Li, K.Q.
Yang, J.B.
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机构:
Shi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang,110016, ChinaShi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
Yang, J.B.
Zhang, Z.F.
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机构:
Shi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang,110016, ChinaShi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang,110016, China
机构:
Chinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Yan, J. X.
Zhang, Z. J.
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机构:
Chinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Zhang, Z. J.
Li, K. Q.
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机构:
Chinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Li, K. Q.
Yang, J. B.
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Yang, J. B.
Zhang, Z. F.
论文数: 0引用数: 0
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机构:
Chinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China