Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires

被引：24

作者：

Sun, Xiaoxiao ^{[1
]}

Wang, Xinqiang ^{[1
,2
]}

Wang, Ping ^{[1
]}

Sheng, Bowen ^{[1
]}

Li, Mo ^{[3
]}

Su, Juan ^{[3
]}

Zhang, Jian ^{[3
]}

Liu, Fang ^{[1
]}

Rong, Xin ^{[1
]}

Xu, Fujun ^{[1
]}

Yang, Xuelin ^{[1
]}

Qin, Zhixin ^{[1
]}

Ge, Weikun ^{[1
]}

Shen, Bo ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesosccop, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[3] Microsyst & Terahertz Res Ctr, 596,Yinhe Rd, Chengdu 610200, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 03期

基金：

中国国家自然科学基金;

关键词：

JUNCTION DIODE;

D O I：

10.1364/OME.7.000904

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It remains a challenge to characterize the doping type in nanowires (NWs). We report in this paper a novel way to probe the doping type in GaN NWs by photoassisted kelvin probe force microscopy (KPFM), as a proper example showing that this approach is straight forward, effective and practical. Through illumination with super-bandgap light, photo-generated electrons in the n-region are swept away from the surface due to the electric field in the space-charge region, thus the holes move to the surface; while in contrast, electrons in the p-region will move to the surface. The fact that the quasi-Fermi level moves upwards in n-type while downwards in p-type identifies the doping type of GaN NWs, and is clearly revealed by the contact potential difference detected by photoassisted KPFM. (C) 2017 Optical Society of America

引用

页码：904 / 912

页数：9

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