Analysis and Modeling of Minority Carrier Injection in Deep-Trench Based BCD Technologies

被引：0
|
作者：
Kollmitzer, Michael [1 ]
Olbrich, Markus [2 ]
Barke, Erich [2 ]
机构：
[1] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria
[2] Univ Leipzig, Inst Microelect Syst, Hannover, Germany
来源：
2013 9TH CONFERENCE ON PH. D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2013) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a methodology for circuit simulation of parasitic effects caused by minority carrier injection into the substrate of a deep-trench based BCD technology. An equivalent circuit is used containing pre-calculated macro models for the injecting diode, the substrate of the chip and the sensitive diode. The macro models are generated by means of TCAD simulations which determine the carrier density distribution in the substrate. The carrier density in the substrate at the sensitive pn-junction is directly related to the parasitic current of the device. The results of the simulations are verified by test chip measurements.
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页码：245 / 248
页数：4
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