Technological issues for micromachining of new passive THz-components based on deep-trench silicon etching

被引：0

作者：

Biber, S ^{[1
]}

Schür, J ^{[1
]}

Schmidt, LP ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Microwave Technol, D-91058 Erlangen, Germany

来源：

CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a survey of the application of micromachining techniques for the fabrication of THz-components. Micro-machining of new THz- devices based on deep trench etching of silicon will be discussed with respect to its capability to generate complex 3-dimensional geometries with high aspect ratios (ARs) and to meet the high mechanical requirements for THz-components. First results for the application of deep trench etching for the design of a branch-line coupler for 600GHz will be discussed. We will emphasize the potential of silicon based microstructures for the manufacturing of new devices and focus on technological issues.

引用

页码：145 / 146

页数：2

共 7 条

[1] SILICON DEEP-TRENCH ETCHING USING FREON 12 PLUS INERT GAS PLASMAS.
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1600, (27):
[2] Design of new passive THZ devices based on micromachining techniques
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[3] Honeycomb-shaped deep-trench oxide posts combined with the sbm technology for micromachining single-crystal silicon without using SOI
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[4] Honeycomb-shaped deep-trench oxide posts combined with the SBM technology for micromachining single-crystal silicon without using SOI
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[7] THE BLACK SILICON METHOD - A UNIVERSAL METHOD FOR DETERMINING THE PARAMETER SETTING OF A FLUORINE-BASED REACTIVE ION ETCHER IN DEEP SILICON TRENCH ETCHING WITH PROFILE CONTROL
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