Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers

被引：4

作者：

Simoen, E. ^{[1
]}

Vincent, B. ^{[1
]}

Merckling, C. ^{[1
]}

Gencarelli, F. ^{[1
]}

Chu, L. -K. ^{[1
]}

Loo, R. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

HIGH PURITY SILICON 12 | 2012年 / 50卷 / 05期

关键词：

INTERFACE; GERMANIUM; TECHNOLOGY; DEPOSITION; IMPACT; TRAPS; SN;

D O I：

10.1149/05005.0279ecst

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Deep levels present in MOS capacitors, fabricated on GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). The gate dielectric is composed of 9 nm Al2O3 deposited by Molecular Beam Epitaxy (MBE) on two different types of Interfacial Oxide Layers (IOL). It is shown that the density of interface traps (D-it) near the valence band edge is significantly reduced for GeSn epilayers compared with the same gate stack on a Ge cap. At the same time, several deep-level traps in the germanium depletion region have been observed, whereof the origin is discussed.

引用

页码：279 / 287

页数：9

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