Characterization and modeling of domain engineered relaxor ferroelectric single crystals

被引:1
|
作者
Malbec, A [1 ]
Liu, T [1 ]
Lynch, CS [1 ]
机构
[1] Georgia Inst Technol, GWW Sch Mech Engn, Atlanta, GA 30332 USA
来源
JOURNAL DE PHYSIQUE IV | 2004年 / 115卷
关键词
D O I
10.1051/jp4:2004115007
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This work describes a measurement and modeling effort directed at improving our understanding of relaxor single crystals of PZN-xPT and PMN-xPT. Results include electromechanical characterization, crystal variant modeling, and modeling of field induced phase transitions. Key results include reducing high cycle fatigue by elimination of sharp corners on bulk specimens and development of engineered domain states other than [001] in rhombohedral compositions. The latter development coupled with the modeling work has led to identification and characterization of the [001] cut with properties optimized for d(31) and d(32) applications.
引用
收藏
页码:59 / 66
页数:8
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