Recombination rate constant of free electrons and holes in thin CdSe films

被引：2
|
作者：
Radychev, N. A. [1 ]
Novikov, G. F. [1 ]
机构：
[1] Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Region, Russia
来源：
RUSSIAN CHEMICAL BULLETIN | 2006年 / 55卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
cadmium selenide; recombination; electron; hole; rate constant; kinetics; mechanism;
D O I：
10.1007/s11172-006-0330-z
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The decay kinetics of electrons generated in thin CdSe films by laser pulse (wavelength 337 nm, pulse duration 8 ns) at 295 K was studied by the microwave photoconductivity method (36 GHz). Based on analysis of the photoresponse decay kinetics and the reactions of free and trapped electrons, holes, and ions, a model for the processes was proposed and the recombination rate constant of free electrons and holes in cadmium selenide was determined, being (4-6) (.) 10(-11) cm(3) s(-1).
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页码：766 / 769
页数：4
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