The origin of switching noise in GaAs/AlGaAs lateral gated devices

被引：9
|
作者：
Long, A. R. [1 ]
Pioro-Ladriere, M.
Davies, J. H.
Sachrajda, A. S.
Gaudreau, Louis
Zawadzki, P.
Lapointe, J.
Gupta, J.
Wasilewski, Z.
Studenikin, S. A.
机构：
[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8QQ, Lanark, Scotland
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[3] Univ Sherbrooke, Dept Phys, Sherbrooke, PQ J1K 2R1, Canada
[4] Univ Sherbrooke, Regrp Quebecois Mat Pointe, Sherbrooke, PQ J1K 2R1, Canada
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期
关键词：
quantum devices; telegraph noise; bias cooling;
D O I：
10.1016/j.physe.2006.03.118
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model depends on there being a small tunnel current of electrons from gate to channel and we have detected such a current at the level of 10(-20) A using a quantum corral fabricated on similar material. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：553 / 556
页数：4
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