Photo-leakage current of poly-Si thin film transistors with offset and lightly doped drain structure

被引：4
|
作者：
Kobayashi, K [1 ]
Niwano, Y [1 ]
机构：
[1] Mitsubishi Electr Corp, Adv Display Dev Dept, LCD Business Planning Div, Kumamoto 8611198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 10期
关键词：
poly-Si; poly-Si TFT; offset structure; offset; LDD; photo-leakage current; off current; on current; hydrogenation; leakage current; TFT;
D O I：
10.1143/JJAP.38.5757
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The suppression of photo-leakage current (I-photo) has been an important issue in the fabrication of high-brightness liquid-crystal projectors. We have investigated the generation mechanism of I-photo in poly-Si thin film transistors (TFTs) with an offset structure. It is found that I-photo is mainly generated at the offset legion and the decrease in the offset length is important to suppress I-photo This is because the electric field is applied to the offset region and carriers, generated in the region, can be extracted. We have realized an offset poly-Si TFT with both high mobility and low I-photo by decreasing the offset length to 0.5 mu m with the lateral etching method.
引用
收藏
页码：5757 / 5761
页数：5
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