A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs

被引：0
|
作者：
Pavanello, MA
Martino, JA
机构：
来源：
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1997年 / 97卷 / 23期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this work a new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in enhancement-mode SOI nMOSFETs is presented. The proposed method is only based in the measurement of the front threshold voltage as a function of the applied back gate bias curve. The new method is supported by MEDICI numerical bidimensional simulations realized with several fixed charge densities values and good agreement was found between the results obtained by the proposed method and the simulations. In addition the sensibility of the proposed method with a process parameters variation is investigated. Finally, the proposed method is applied on experimental results.
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页码：162 / 167
页数：6
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