Stacking faults and twin boundaries in fcc crystals determined by x-ray diffraction profile analysis

被引:247
|
作者
Balogh, Levente [1 ]
Ribarik, Gabor [1 ]
Ungar, Tamas [1 ]
机构
[1] Eotvos Lorand Univ, Dept Mat Phys, Inst Phys, H-1518 Budapest, Hungary
基金
匈牙利科学研究基金会;
关键词
D O I
10.1063/1.2216195
中图分类号
O59 [应用物理学];
学科分类号
摘要
A systematic procedure is developed to evaluate the density of planar defects together with dislocations and crystallite or subgrain size by x-ray line profile analysis in fcc crystals. Powder diffraction patterns are numerically calculated by using the DIFFAX software for intrinsic and extrinsic stacking faults, and twin boundaries for the first 15 Bragg reflections up to 20% fault density. It is found that the Bragg reflections consist of five subreflection types categorized by specific selection rules for the hkl indices in accordance with the theory of Warren [Prog. Met. Phys. 8, 147 (1959)]. It is shown that the profiles of the subreflections are Lorentzian-type functions. About 15 000 subreflections are evaluated for their full widths of half maxima and their positions relative to the exact Bragg angle. These values are parametrized as a function of the density and type of planar faults. A whole profile fitting procedure, previously worked out for determining the dislocation structure and crystallite size distributions, is extended for planar fault by including these data into the software. The method is applied to evaluate twin densities in nanocrystalline and submicron grain-size copper specimens. It is found that twinning becomes substantial under a critical crystallite or subgrain size of about 40 nm, in accordance with other observations.
引用
收藏
页数:10
相关论文
共 50 条
  • [41] X-RAY DIFFRACTION BY CLOSE-PACKED CRYSTALS WITH GROWTH STACKING FAULTS ASSUMING AN NORMAL-LAYER INFLUENCE
    GEVERS, R
    ACTA CRYSTALLOGRAPHICA, 1954, 7 (6-7): : 492 - 494
  • [42] DEVELOPMENTS IN COMPUTER SIMULATION OF X-RAY DIFFRACTION CONTRAST IMAGES OF STACKING FAULTS.
    Kowalski, G.
    Lang, A.R.
    1600, (19):
  • [43] Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction
    Moram, M. A.
    Johnston, C. F.
    Kappers, M. J.
    Humphreys, C. J.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (16) : 2189 - 2191
  • [44] Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
    Davtyan, Arman
    Lehmann, Sebastian
    Kriegner, Dominik
    Zamani, Reza R.
    Dick, Kimberly A.
    Bahrami, Danial
    Al-Hassan, Ali
    Leake, Steven J.
    Pietsch, Ullrich
    Holy, Vaclav
    JOURNAL OF SYNCHROTRON RADIATION, 2017, 24 : 981 - 990
  • [45] X-RAY DIFFRACTION MEASUREMENTS OF STACKING FAULTS IN ALPHA SILVER-TIN ALLOYS
    NEWTON, CJ
    RUFF, AW
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3860 - &
  • [46] An X-ray diffraction technique for analyzing basal-plane stacking faults in GaN
    Paduano, Qing S.
    Weyburne, David W.
    Drehman, Alvin J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (11): : 2446 - 2455
  • [47] X-RAY DIFFRACTION FROM DEFORMED CERIUM - EFFECS DUE TO EXTRINSIC STACKING FAULTS
    OTTE, HM
    CHESSIN, H
    PHYSICA STATUS SOLIDI, 1965, 11 (01): : 91 - &
  • [48] X-RAY-DIFFRACTION CONTRAST AT TWIN BOUNDARIES
    AKASHI, Y
    FUTAGAMI, K
    OKI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (01) : 15 - 17
  • [49] X-RAY DIFFRACTION BY FACE-CENTERED CUBIC CRYSTALS WITH DEFORMATION FAULTS
    PATERSON, MS
    JOURNAL OF APPLIED PHYSICS, 1952, 23 (08) : 805 - 811