A Triple-Stacked Class-E mm-Wave SiGe HBT Power Amplifier

被引：0
|
作者：
Datta, Kunal [1 ]
Roderick, Jonathan [1 ]
Hashemi, Hossein [1 ]
机构：
[1] Univ So Calif, Elect Engn Electrophys, Los Angeles, CA 90089 USA
来源：
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年
关键词：
Power Amplifier (PA); Silicon Germanium (SiGe) HBT; class-E; BVCEO; millimeter-wave; Q-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Q-band, single ended, two-stage, triple-stacked, Class-E power amplifier is designed and fabricated in a 0.13 mu m SiGe HBT BiCMOS process. The Class-E amplifier comprises of three series-stacked HBTs with capacitive divider networks at the HBT bases and collectors to ensure proper large signal swing and beyond BVCEO operation at mm-wave frequencies. The measured performance of the fabricated chip show 22.2 dBm maximum output power at 20.8% peak power added efficiency, and 15.4 dB of power gain across 4 GHz centered around 40 GHz for a supply voltage of 6.5 V. The total chip area including the pads is 0.8 mm x 1.28 mm.
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页数：3
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