Sol-gel derived PZT/RuO2 multilayer films on stainless steel substrates

被引:19
|
作者
Yi, JH [1 ]
Seveno, R [1 ]
Gundel, HW [1 ]
机构
[1] Univ Nantes, Lab Phys Isolants & Optron, EPSE, EA 2158, F-44322 Nantes 3, France
关键词
PZT; RuO2; stainless steel; sol-gel; ferroelectric thick films;
D O I
10.1080/10584589908210150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The structural and electric properties of PZT thin films deposited by the sol-gel process on RuO2 coated stainless steel as well as on bare stainless steel were studied and compared. As-deposited amorphous RuO2 thin films on stainless steel were transformed to pure rutile-type RuO2 at temperatures ranging from 400 degrees C to 600 degrees C, the resistivity of which had a value less than 200 mu Ohm . cm. The PZT films processed on RuO2 needed slightly higher temperature (610 degrees C) in order to be completely transformed into the perovskite phase than PZT on stainless steel (600 degrees C). The films showed best ferroelectric properties when depositing it on the 100 nm thick RuO2 bottom electrodes fired at 400 degrees C for 10 minutes. The hysteresis loops of the PZT films were more slim when being processed on RuO2 coated stainless steel than on bare stainless steel. For the RuO2 bottom electrodes the values of coercive field decreased to about 55% of those without a RuO2 layer.
引用
收藏
页码:199 / 214
页数:16
相关论文
共 50 条
  • [21] Structure and electrical properties of multilayer PZT films prepared by sol-gel processing
    Miyazawa, K
    Ito, K
    Maeda, R
    CERAMICS INTERNATIONAL, 2000, 26 (05) : 501 - 506
  • [22] Effect of PbO content on the properties of sol-gel derived PZT films
    Donnelly Corp, Tucson, United States
    Integrated Ferroelectrics, 1997, 14 (1 -4 pt 1): : 265 - 273
  • [23] Effect of PbO content on the properties of sol-gel derived PZT films
    Teowee, G
    Boulton, JM
    McCarthy, K
    Franke, EK
    Alexander, TP
    Bukowski, TJ
    Uhlmann, DR
    INTEGRATED FERROELECTRICS, 1997, 14 (1-4) : 265 - 273
  • [24] Dielectric breakdown strength in sol-gel derived PZT thick films
    Chen, H.Daniel
    Udayakumar, K.R.
    Li, Kewen K.
    Gaskey, Christopher J.
    Cross, L.Eric
    Integrated Ferroelectrics, 1997, 15 (1 -4 pt 2): : 89 - 98
  • [25] Dielectric breakdown strength in sol-gel derived PZT thick films
    Chen, HD
    Udayakumar, KR
    Gaskey, CJ
    Cross, LE
    INTEGRATED FERROELECTRICS, 1997, 15 (1-4) : 89 - 98
  • [26] Characterization of PZT thick films derived from sol-gel techniques
    Cheng, JR
    Luo, LQ
    Meng, ZY
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 617 - 620
  • [27] The effects of solvent on the properties of sol-gel derived PZT thin films
    Jung, JY
    Kim, WS
    Park, HH
    Kim, TS
    FERROELECTRICS, 2001, 263 (1-4) : 1627 - 1634
  • [28] Enhanced fatigue characteristics of sol-gel derived PZT thin films
    Shim, Donghyun
    Pak, Jaemoon
    Nam, Kuangwoo
    Park, Gwangweo
    JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 449 (1-2) : 32 - 35
  • [29] Characterisation of sol-gel derived PZT films prepared at low temperature
    Miyazawa, K
    Yano, J
    Kaga, M
    Ito, Y
    Ito, K
    Maeda, R
    SURFACE ENGINEERING, 2000, 16 (03) : 239 - 241
  • [30] Processing of sol-gel derived PZT coatings on non-planar substrates
    Cooney, TG
    Francis, LF
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (03) : 291 - 300