Direct writing of continuous and discontinuous sub-wavelength periodic surface structures on single-crystalline silicon using femtosecond laser

被引:30
|
作者
Kuladeep, Rajamudili [1 ]
Sahoo, Chakradhar [1 ]
Rao, Desai Narayana [1 ]
机构
[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
关键词
Silicon wafers - Surface plasmons - Sapphire - Crystalline materials - Dimethyl sulfoxide - Electromagnetic wave polarization;
D O I
10.1063/1.4881556
中图分类号
O59 [应用物理学];
学科分类号
摘要
Laser-induced ripples or uniform arrays of continuous near sub-wavelength or discontinuous deep sub-wavelength structures are formed on single-crystalline silicon (Si) by femtosecond (fs) laser direct writing technique. Laser irradiation was performed on Si wafers at normal incidence in air and by immersing them in dimethyl sulfoxide using linearly polarized Ti:sapphire fs laser pulses of similar to 110 fs pulse duration and similar to 800 nm wavelength. Morphology studies of laser written surfaces reveal that sub-wavelength features are oriented perpendicular to laser polarization, while their morphology and spatial periodicity depend on the surrounding dielectric medium. The formation mechanism of the sub-wavelength features is explained by interference of incident laser with surface plasmon polaritons. This work proves the feasibility of fs laser direct writing technique for the fabrication of sub-wavelength features, which could help in fabrication of advanced electro-optic devices. (C) 2014 AIP Publishing LLC.
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页数:4
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