Surface structure of Pt/Si(001)

被引:10
|
作者
Choi, DS [1 ]
Jung, JW
Shin, DS
Yoon, MS
Cho, WS
Kim, JY
Chae, KH
Jeong, KH
Whang, CN
机构
[1] Kangweon Natl Univ, Dept Phys, Chunchon 200701, Kangwondo, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[3] Yonsei Univ, Atom Scale Surface Sci Ctr, Seoul 120749, South Korea
关键词
low energy ion scattering (LEIS); silicon; platinum; surface structure; morphology; roughness; and topography; chemisorption;
D O I
10.1016/S0039-6028(02)01373-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated Pt adsorption on the Si(001) surface using LEED and low energy ion scattering spectroscopy (ISS). We observe a c(4 x 2) LEED image at annealing temperatures between 700 and 1150 degreesC. For annealing temperatures between 800 and 1000 degreesC a c(4 x 6) LEED image is observed simultaneously with the c(4 x 2) LEED image. The Pt/Si(001) surface structure does not depend on the initial Pt coverage. We also measure the adsorption site at the c(4 x 2) surface using the ISS. We find that the Pt atoms are adsorbed at T3 sites and some Pt atoms diffuse into the bulk. The height of the adsorbed Pt atoms from the Si surface is determined to be 0.5 Angstrom. (C) 2002 Elsevier Science B,V. All rights reserved.
引用
收藏
页码:L222 / L226
页数:5
相关论文
共 50 条
  • [41] Domain wall structure of Te/Si(001) surface studied by LEED
    Ohtani, T
    Tamiya, K
    Takeda, Y
    Urano, T
    Hongo, S
    APPLIED SURFACE SCIENCE, 1998, 130 : 112 - 117
  • [42] STEP STRUCTURE TRANSFORMATION OF SI(001) SURFACE INDUCED BY CURRENT II
    NATORI, A
    FUJIMURA, H
    FUKUDA, M
    APPLIED SURFACE SCIENCE, 1992, 60-1 : 85 - 91
  • [43] EFFECTS OF COULOMB INTERACTIONS ON THE ELECTRONIC-STRUCTURE OF THE SI(001) SURFACE
    VINCHON, T
    DESJONQUERES, MC
    OLES, AM
    SPANJAARD, D
    PHYSICAL REVIEW B, 1993, 48 (11) : 8190 - 8202
  • [44] Initial adsorption structure of ethylene on Si(001) surface at room temperature
    Seo, JH
    Park, JY
    Whang, CN
    Kim, SS
    Choi, DS
    Chae, KH
    SURFACE SCIENCE, 2005, 582 (1-3) : L129 - L134
  • [45] Structure model for the type-C defect on the Si(001) surface
    Uda, T
    Terakura, K
    PHYSICAL REVIEW B, 1996, 53 (11): : 6999 - 7001
  • [46] The effect of controlled ion bombardment on the electronic structure of the Si(001) surface
    Roos, K. R.
    Lozano, J.
    Craig, J. H., Jr.
    APPLIED SURFACE SCIENCE, 2008, 254 (07) : 1977 - 1980
  • [47] EQUILIBRIUM STRUCTURE AND MIGRATION OF A SINGLE DIMER VACANCY ON THE SI(001) SURFACE
    JEONG, MS
    LEE, YH
    HWANG, YG
    PHYSICAL REVIEW B, 1995, 51 (23): : 17151 - 17157
  • [48] Domain wall structure of Te/Si(001) surface studied by LEED
    Ohtani, T.
    Tamiya, K.
    Takeda, Y.
    Urano, T.
    Hongo, S.
    Applied Surface Science, 1998, 130-132 : 112 - 117
  • [49] Influence of kinks on the structure of narrow SB terrace on Si(001) surface
    Nakamura, Y
    Kawai, H
    Nakayama, M
    SURFACE SCIENCE, 1999, 426 (02) : 251 - 258
  • [50] A new Si tetramer structure on Si (001)
    Wang, Changqing
    Zhang, Yongsheng
    Jia, Yu
    SOLID STATE SCIENCES, 2009, 11 (09) : 1661 - 1665