Chemical state of phosphorus at the silicon surface

被引：11

作者：

Sato, Y ^{[1
]}

Yoshimura, Y ^{[1
]}

Ono, K ^{[1
]}

Fujioka, H ^{[1
]}

Maeyama, S ^{[1
]}

Oshima, M ^{[1
]}

机构：

[1] UNIV TOKYO, BUNKYO KU, TOKYO 113, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 7A期

关键词：

silicon; phosphorus; surface; pileup; SRPES;

D O I：

10.1143/JJAP.36.4299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used synchrotron radiation photoelectron spectroscopy (SRPES) to investigate the chemical state of phosphorus that piles up at the silicon surface covered with a native oxide and found that the piled-up phosphorus does not make bonds with oxygen.

引用

页码：4299 / 4300

页数：2

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