The Influence of Chemical Oxidation on Surface State and Photoluminescence of Porous Silicon

被引：2

作者：

Li Jingjian ^{[1
]}

Diao Peng ^{[1
]}

Cai Shengmin ^{[1
]}

Hou Yongtian ^{[2
]}

Wang Xin ^{[2
]}

Zhang Shulin ^{[2
]}

机构：

[1] Peking Univ, Dept Chem, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

ACTA PHYSICO-CHIMICA SINICA | 1994年 / 10卷 / 08期

关键词：

Porous silicon; Fourier transformed infrared transmission spectra; Photoluminescence; Photoluminescence mechanism;

D O I：

10.3866/PKU.WHXB19940814

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration. the relative amount of the Si-H-2 surface species on PS decreases even though the photoluminescence intensity increases, the result suggests that it isn't SiH2 but Si O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.

引用

页码：737 / 740

页数：4

共 10 条

[1] BENIKMEN KH, 1965, SURF SCI, V3, P314
[2] CAUHEAU LT, 1991, J APPL PHYS, V70, P422
[3] CENHAEN LT, 1990, APPL PHYS LETT, V57, P1046
[4] CRAGUTI T, 1980, J APPL PHYS, V19, P231
[5] HRASLOWSKI HJ, 1957, PHYS REV, V107, P966
[6] LOW-TEMPERATURE OXIDATION OF CRYSTALLINE POROUS SILICON
KATO, Y
ITO, T
HIRAKI, A
[J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 614 - 618
[7] LELUMAT V, 1991, APPL PHYS LETT, V58, P856
[8] SARLIN Z, 1993, APPL PHYS LETT, V62, P7
[9] TASI C, 1992, APPL PHYS LETT, V60, P1700
[10] ELECTRONIC-STRUCTURE OF LIGHT-EMITTING POROUS SI
VASQUEZ, RP
FATHAUER, RW
GEORGE, T
KSENDZOV, A
LIN, TL
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (08) : 1004 - 1006

← 1 →