Preparation of Cr-doped TiO2 thin film of P-type conduction for gas sensor application

被引：45
|
作者：
Ruiz, A
Cornet, A
Sakai, G
Shimanoe, K
Morante, JR
Yamazoe, N
机构：
[1] Univ Barcelona, EME Elect Dept, E-08028 Barcelona, Spain
[2] Kyushu Univ, Fac Engn Sci, Dept Mat Sci, Fukuoka 8168580, Japan
来源：
CHEMISTRY LETTERS | 2002年 / 09期
关键词：
D O I：
10.1246/cl.2002.892
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Titanium dioxide (TiO2) could be doped with as much as 8.7 atom% Cr by means of a sol-gel method. XRD analysis revealed that the powder of Cr (8.7 atom%)-doped TiO2 calcined at 500degreesC consisted of small crystallites ascribale to anatase structure. The thin film of doped TiO2 (70 mum) at this composition was found to behave as a p-type semiconductor on exposure to CO and NO2 in air: it responded to dilute NO2 with a sharp decrease in electrical resistance.
引用
收藏
页码：892 / 893
页数：2
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