Observation of whispering gallery modes in nonpolar m-plane GaN microdisks

被引：15
|
作者：
Tamboli, Adele C. [1 ]
Schmidt, Mathew C. [1 ]
Hirai, Asako [1 ]
DenBaars, Steven P. [1 ]
Hu, Evelyn L. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期
关键词：
etching; focused ion beam technology; gallium compounds; III-V semiconductors; indium compounds; ion beam effects; photoluminescence; semiconductor quantum wells; spectral line shift; whispering gallery modes; wide band gap semiconductors; GAN/INGAN MICRODISKS; EMISSION; LASERS;
D O I：
10.1063/1.3160550
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated nonpolar GaN/InGaN microdisks using band-gap selective photoelectrochemical etching. These microdisks have a smoother optical cavity than our previous c-plane microdisks, and they support whispering gallery modes with quality factors as high as 2000 after a focused ion beam treatment to the quantum wells. Because of the lack of a Stokes shift in the quantum wells of these m-plane disks, absorption losses play a much more significant role than in our earlier c-plane microdisks, and the light which couples into the modes is emission from the InGaN post rather than the quantum wells within the cavity.
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页数：3
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