Thermal ionization of Cs Rydberg states

被引:2
|
作者
Glukhov, I. L. [1 ]
Ovsiannikov, V. D. [1 ]
机构
[1] Voronezh State Univ, Dept Phys, Voronezh 394006, Russia
基金
俄罗斯基础研究基金会;
关键词
Rydberg states; Black-body radiation; Thermal photoionization; RADIATION;
D O I
10.1016/j.nimb.2008.10.036
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Rates P(nl) of photoionization from Rydberg ns-, np-, nd-states of a valence electron in Cs, induced by black-body radiation, were calculated on the basis of the modified Fues model potential method. The numerical data were approximated with a three-term expression which reproduces in a simple analytical form the dependence of P(nl) on the ambient temperature T and on the principal quantum number n. The comparison between approximate and exactly calculated values of the thermal ionization rate demonstrates the applicability of the proposed approximation for highly excited states with n from 20 to 100 in a wide temperature range of T from 100 to 10,000 K. We present coefficients of this approximation for the s-, p- and d-series of Rydberg states. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:310 / 312
页数:3
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