Carrier lifetime control by intentional boron doping in aluminum doped p-type 4H-SiC epilayers

被引：7
|
作者：
Murata, K. [1 ]
Tawara, T. [2 ,3 ]
Yang, A. [1 ]
Takanashi, R. [1 ]
Miyazawa, T. [1 ]
Tsuchida, H. [1 ]
机构：
[1] Cent Res Inst Elect Power Ind CRIEPI, 2-6-1 Nagasaka, Yokosuka, Kanagawa 2400196, Japan
[2] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[3] Fuji Elect Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2021年 / 129卷 / 02期
关键词：
RECOMBINATION;
D O I：
10.1063/5.0030011
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The carrier lifetime control in p-type 4H-SiC epilayers with intentional aluminum (Al) and boron (B) doping is demonstrated as part of work to develop a p-type "recombination-enhancing layer" for n-channel insulated gate bipolar devices fabricated on p-type substrates. The (Al+B)-doped epilayers (Al: 5x10(17), B: 4x10(16)cm(-3)) showed a very short minority carrier lifetime of less than 20ns at 293K, resembling that of highly Al-doped epilayers (Al: 1x10(19)cm(-3)). Besides, the minority carrier lifetimes in (Al+B)-doped epilayers are stable against post-annealing in Ar and H-2 ambient, while that of Al-doped epilayers varied considerably. PiN diodes with a 10 mu m-thick (Al+B)-doped buffer layer inserted on p-type substrates showed no evident degradation after a stress test under a pulse current density of 2000A/cm(2).
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页数：7
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