Effect of Si/C ratio on thermoelectric properties of β-FeSi2 mechanically alloyed with (Si plus C) additions

被引:14
|
作者
Nagai, H [1 ]
Katsura, T [1 ]
Ito, M [1 ]
Katsuyama, S [1 ]
Majima, K [1 ]
机构
[1] Osaka Univ, Grad Sch, Dept Mat Sci & Proc, Suita, Osaka 5650871, Japan
来源
MATERIALS TRANSACTIONS JIM | 2000年 / 41卷 / 02期
关键词
beta-FeSi2; thermoelectric material; thermal conductivity; mechanical alloying; Seebeck coefficient; dispersion of SiC;
D O I
10.2320/matertrans1989.41.287
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to improve the thermoelectric performance of beta-phase, the thermoelectric properties of hot-pressed n-type Fe0.98Co0.02Si2 and p-type Fe0.92Mn0.08Si2 mechanically alloyed with 4 mass% of (Si + C) powders at various Si/C molar ratios (Si/C = 0.5 similar to 2) have been investigated. Both the n-type and p-type mechanically alloyed and hot-pressed samples are composed of mostly the beta-phase with a dispersion of a small amount of metallic a-phase particles. The amount of the epsilon-phase decreases with increasing Si/C ratio in samples containing 4 mass%(Si + C). The epsilon-phase disappears at Si/C = 1.5 for the n-type and 1.75 for p-type FeSi2. Many fine alpha-SiC particles around 20 nm form in the samples mechanically alloyed for 20 h and hot-pressed at 1173 K for 1 h. The thermoelectric power increases with increasing Si/C ratio due to the increase in the amount of the semiconducting beta-phase by the reaction of the metallic epsilon-phase with some part of Si, which was added to form SiC. The thermoelectric power exhibits a maximum at Si/C = 1.5 in n-type FeSi2 containing 4 mass% (di + C) and Si/C = 1.75 for p-type. Although the electrical resistivity is increased by the addition of (Si + C), the Si/C ratio dependence of the electrical resistivity is not drastic for both n-type and p-type FeSi2. The addition of (Si + C) markedly decreases the thermal conductivity of both n-type and p-type FeSi2 clue to the dispersion of line alpha-SiC particles. The maximum figure of merit values appear at Si/C = 1.5 in n-type FeSi2 samples containing 4 mass% (Si + C) and Si/C = 1.75 for p-type.
引用
收藏
页码:287 / 292
页数:6
相关论文
共 50 条
  • [11] Effect of Nanostructuring on the Thermoelectric Properties of β-FeSi2
    Abbassi, Linda
    Mesguich, David
    Berthebaud, David
    Le Tonquesse, Sylvain
    Srinivasan, Bhuvanesh
    Mori, Takao
    Coulomb, Loic
    Chevallier, Geoffroy
    Estournes, Claude
    Flahaut, Emmanuel
    Viennois, Romain
    Beaudhuin, Mickael
    NANOMATERIALS, 2021, 11 (11)
  • [12] Effect of dispersed Si-phase on thermoelectric properties of FeSi2 prepared by mechanical alloying and sintering
    Min, BG
    Lee, DH
    PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, : 315 - 320
  • [13] Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement
    Tatsuhiko Taniguchi
    Shunya Sakane
    Shunsuke Aoki
    Ryo Okuhata
    Takafumi Ishibe
    Kentaro Watanabe
    Takeyuki Suzuki
    Takeshi Fujita
    Kentarou Sawano
    Yoshiaki Nakamura
    Journal of Electronic Materials, 2017, 46 : 3235 - 3241
  • [14] Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement
    Taniguchi, Tatsuhiko
    Sakane, Shunya
    Aoki, Shunsuke
    Okuhata, Ryo
    Ishibe, Takafumi
    Watanabe, Kentaro
    Suzuki, Takeyuki
    Fujita, Takeshi
    Sawano, Kentarou
    Nakamura, Yoshiaki
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (05) : 3235 - 3241
  • [15] Thermoelectric properties of β-FeSi2 with Si dispersoids formed by decomposition of α-Fe2Si5 based alloys
    Jiang, JX
    Sasakawa, T
    Matsugi, K
    Sasaki, G
    Yanagisawa, O
    JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 391 (1-2) : 115 - 122
  • [16] Improved photovoltaic properties of a-Si/β-FeSi2/c-Si double heterojunction by Al-doping
    Xu, Jiaxiong
    Yao, Ruohe
    Liao, Rong
    PHYSICA B-CONDENSED MATTER, 2012, 407 (04) : 756 - 758
  • [17] Effect of FeSi2 content on tribological properties of C/C-SiC-FeSi2 composites
    Ning, Yifan
    Fan, Shangwu
    Wang, Le
    Luan, Chenghua
    Deng, Juanli
    Zhang, Litong
    Cheng, Laifei
    CERAMICS INTERNATIONAL, 2019, 45 (17) : 23431 - 23443
  • [18] Epitaxial Orientation of β-FeSi2 on 3C-SiC/Si(111)
    Akiyama, Kensuke
    Kaneko, Satoru
    Kadowaki, Teiko
    Hirabayashi, Yasuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)
  • [19] Effects of Cu addition to n-type β-FeSi2/Si composite on the Si precipitation and its thermoelectric properties
    Farah Liana Binti Mohd Redzuan
    MIkio Ito
    Masatoshi Takeda
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 12234 - 12243
  • [20] Effect of FAPAS Process on the Thermoelectric Properties of β-FeSi2
    Meng, Q. S.
    Fan, W. H.
    Wang, L. Q.
    Ding, L. Z.
    ENERGY AND ENVIRONMENT MATERIAL S, 2010, 650 : 137 - 141