Ultraprecision grinding technologies in silicon semiconductor processing

被引:21
|
作者
Ahearne, E [1 ]
Byrne, G [1 ]
机构
[1] Univ Coll Dublin, Dept Mech Engn, Adv Mfg Sci Res Grp, Dublin 2, Ireland
关键词
semiconductor; silicon; grinding; surface grinding; ultraprecision;
D O I
10.1243/095440504322984812
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The production of silicon substrates for integrated circuits continues to set standards in levels of precision form and finish tolerances required of surface generation processes. Extreme tolerances are specified for a range of parameters such as total thickness variation, global and local planarity, and surface finish over substrate dimensions of up to 300 mm in diameter (current-generation silicon wafer). These tolerances are related to the 'design rule' for each generation of microprocessor and memory unit. The economic and technological environment of an industry that demands such precision is reviewed. The general production process is then described with particular reference to surface grinding as an enabling technology. The context of developments in ultraprecision machine tool technology is delineated, requirements for assuring the indicated tolerances are set out and machine solutions representing the 'state-of-the-art' and 'next-generation' machine technologies reported.
引用
收藏
页码:253 / 267
页数:15
相关论文
共 50 条
  • [21] A study on surface quality of ultraprecision grinding for engineering ceramics
    Yu, S.Y.
    Han, X.S.
    Lin, B.
    Lin, B.
    Key Engineering Materials, 2001, 202-203 : 35 - 40
  • [22] A study on surface quality of ultraprecision grinding for engineering ceramics
    Yu, SY
    Han, XS
    Lin, B
    Lin, B
    ADVANCES IN ABRASIVE PROCESSES, 2001, 202-2 : 35 - 40
  • [23] Research on ultraprecision and mirror grinding of hard and brittle materials
    Wuhan Gangtie Xueyuan Xuebao/Journal of Wuhan Iron and Steel University, 1997, 20 (03): : 2 - 4
  • [24] Ultraprecision grinding technology of microstructured optical functional molds
    Zhao, Qingliang
    Guo, Bing
    Jixie Gongcheng Xuebao/Journal of Mechanical Engineering, 2011, 47 (21): : 177 - 185
  • [25] Ultraprecision grinding of a new reaction-sintered SiC
    Key Laboratory of Fiber Optical Sensing Technology and Information Processing, Wuhan University of Technology, Wuhan 430070, China
    不详
    Zhongguo Jixie Gongcheng, 2006, 6 (595-597):
  • [26] Development of an ultraprecision grinding machine with trigonal prism type pentahedral structure for 400mm silicon wafer
    Abe, K
    Ishikawa, T
    Koma, Y
    Arai, K
    Kitano, M
    PRECISION ENGINEERING, NANOTECHNOLOGY, VOL 1, PROCEEDINGS, 1999, : 16 - 19
  • [27] LASER PROCESSING OF SEMICONDUCTOR SILICON .2.
    MAGEE, TJ
    MCNAB, TK
    SOLID STATE TECHNOLOGY, 1982, 25 (12) : 101 - 105
  • [28] LASER PROCESSING OF SEMICONDUCTOR SILICON .1.
    MAGEE, TJ
    MCNAB, TK
    SOLID STATE TECHNOLOGY, 1982, 25 (07) : 74 - 82
  • [29] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING
    BEAN, KE
    GLEIM, PS
    PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1469 - &
  • [30] Deuterium processing stabilizes silicon semiconductor devices
    Haggin, Joseph
    Chemical and Engineering News, 1996, 74 (12):