Double domain ordering and selective removal of C-60 on Ag/Si(111)-(root 3x root 3)R30 degrees

被引：47
|
作者：
Upward, MD
Moriarty, P
Beton, PH
机构：
[1] Department of Physics, University of Nottingham, University Park
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.56.R1704
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have used ultra-high-vacuum scanning tunneling microscopy to investigate the interaction of C-60 with the Ag/Si(111)-(root 3 x root 3)R30 degrees surface. C-60 molecules bond preferentially at defect sites and step edges and form double domain islands that are ordered relative to the bulk Si in exactly the same positions as previously observed for Si(111)-7x7. We discuss the dependence of molecular packing on surface geometry and reactivity and show that the islands are removed by annealing leaving Si(111) terraces coexisting with a network of strongly bound C-60 molecules adsorbed at step edges.
引用
收藏
页码：R1704 / R1707
页数：4
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