Optical properties of As-grown, α-particle irradiated and N2+-ion implaned GaN

被引：0
|
作者：
Kunert, HW [1 ]
Juillaguet, S
Camassel, J
Malherbe, JB
Odendaal, RQ
Brink, DJ
Prinsloo, LC
机构：
[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
[2] CNRS, GES, UM2, F-34095 Montpellier 5, France
[3] Univ Pretoria, Dept Chem, ZA-0002 Pretoria, South Africa
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1999年 / 216卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3951(199911)216:1<619::AID-PSSB619>3.0.CO;2-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report an investigation of the optical response of unintentionally doped GaN on sapphire submitted to alpha particle irradiation and N-2(+)-ion implantation at 5 keV. Probing the resulting damage by Raman spectroscopy we find that, upon implantation, the ratio of A(1)(LO) and E-2 modes increases. This shows that some free-carrier activation accompanies the implantation damages. Probing next the change in optical response by low temperature photoluminescence, we demonstrate a complex behavior of the near-band-edge (NBE) excitonic lines which is discussed in terms of implantation-induced effects.
引用
收藏
页码：619 / 623
页数：5
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