Raman and photoluminescence spectroscopy from N2+-ion implanted and α-irradiated and annealed GaN/sapphire

被引：6

作者：

Kunert, HW ^{[1
]}

Maurice, TP

Brink, DJ

Prinsloo, LC

Malherbe, JB

Camassel, J

机构：

[1] Univ Pretoria, Dept Phys, ZA-0020 Pretoria, South Africa

[2] Univ Montpellier 2, CNRS, GES, F-34095 Montpellier, France

[3] Univ Pretoria, Dept Chem, ZA-0002 Pretoria, South Africa

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 181卷

关键词：

irradiation; n-GaAs; photoluminescence; Raman spectroscopy;

D O I：

10.1016/S0168-583X(01)00376-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaN on sapphire (SA) was both implanted by N-2(+) ions and alpha -particle irradiated from the GaN and substrate sides. Irradiation-induced vibration modes were observed in GaN. Raman spectra from the substrate reveal more drastic changes. Photoluminescence spectroscopy shows a significant shift of the yellow band toward the higher energy. Annealing results in a good recovery of GaN, while the substrate retains substantial structural damage. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：286 / 292

页数：7

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