Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

被引：4

作者：

Chang, Sung-Yong ^{[2
]}

Jeong, Myeong-Il ^{[1
]}

Chandra, S. V. Jagadeesh ^{[1
]}

Lee, Yong-Boo ^{[3
]}

Hong, Hyo-Bong ^{[4
]}

Reddy, V. Rajagopal ^{[5
]}

Choi, Chel-Jong ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Korea Elect Power Res Inst, Power Integr Grp, Taejon 305380, South Korea

[3] Korea Basic Sci Inst, Jeonju Ctr, Jeonju 561756, South Korea

[4] Elect & Telecommun Res Inst, Future Technol Res Grp, Taejon 305700, South Korea

[5] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2008年 / 11卷 / 04期

关键词：

Er-silicate; Interfacial reaction; High-k; EOT; Interface trap density;

D O I：

10.1016/j.mssp.2009.06.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated a high-k Er-silicate gate dielectric using interfacial reaction between Er and SiO2 films and investigated its thermal stability. The reduced capacitance with increasing annealing temperature is associated with the chemical bonding change of Er-silicate from Er-rich to Si-rich, induced by a reaction between Er-silicate and Si during thermal treatment. Further an increase in the annealing temperature (> 500 degrees C) causes the formation of Si dangling bonds, which is responsible for an increased interface trap density. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：122 / 125

页数：4

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