Sensors for the CDF Run2b silicon detector

被引：3

作者：

Akimoto, T ^{[1
]}

Aoki, M

Azzi, P

Bacchetta, N

Behari, S

Benjamin, D

Bisello, D

Bolla, G

Booth, P

Bortoletto, D

Burghard, A

Busetto, G

Cabrera, S

Canepa, A

Cardoso, G

Chertok, M

Ciobanu, CI

Cooke, P

Derylo, G

Fang, I

Feng, EJ

Fernandez, JP

Flaugher, B

Freeman, J

Galtieri, L

Galyardt, J

Garcia-Sciveres, M

Giurgiu, G

Gorelov, I

Haber, C

Hale, D

Hara, K

Harr, R

Hill, C

Hoeferkamp, M

Hoff, J

Holbrook, B

Hong, SC

Hrycyk, M

Hsiung, TH

Incandela, J

Jeon, EJ

Joo, KK

Junk, T

Kahkola, H

Karjalainen, S

Kim, S

Kobayashi, K

Kong, DJ

Krieger, B

机构：

[1] Univ Tsukuba, Tsukuba, Ibaraki 3058571, Japan

[2] Univ Padua, Padua, Italy

[3] Ist Nazl Fis Nucl, Padua, Italy

[4] Johns Hopkins Univ, Baltimore, MD 21218 USA

[5] Duke Univ, Durham, NC 27708 USA

[6] Purdue Univ, W Lafayette, IN 47907 USA

[7] Univ Liverpool, Liverpool L69 7ZE, Merseyside, England

[8] Univ New Mexico, Albuquerque, NM 87131 USA

[9] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

[10] Univ Calif Davis, Davis, CA 95616 USA

[11] Univ Illinois, Urbana, IL 61801 USA

[12] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[13] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

[14] Univ Calif Santa Barbara, Santa Barbara, CA 93160 USA

[15] Wayne State Univ, Detroit, MI 48202 USA

[16] Kyungpook Natl Univ, Taejon 702701, South Korea

[17] Acad Sinica, Taipei 11529, Taiwan

[18] Okayama Univ, Okayama 7008530, Japan

[19] PSPT, Kuopio, Finland

[20] Univ Helsinki, Helsinki, Finland

[21] Osaka City Univ, Osaka 5588585, Japan

[22] Univ Bologna, Bologna, Italy

[23] Ist Nazl Fis Nucl, I-40126 Bologna, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 04期

关键词：

D O I：

10.1109/TNS.2004.832586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the characteristics of silicon microstrip sensors fabricated by Hamamatsu Photonics; for the CDF Run 2b silicon detector. A total of 953 sensors, including 117 prototype sensors, have been produced and tested. Five sensors were irradiated with neutrons up to 1.4 x 10(14) n/cm(2) as a part of the sensor quality assurance program. The electrical and mechanical characteristics are found to be superior in all aspects and fulfill our specifications. We comment on charge-up susceptibility of the sensors that employ a <100> crystal structure.

引用

页码：1546 / 1554

页数：9

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