60% PAE, 30W X-band and 33% PAE, 100W Ku-Band PAs utilizing 0.15μm GaN HEMT Technology

被引：0

作者：

Torii, Takuma ^{[1
]}

Imai, Shohei ^{[2
,3
]}

Maehara, Hiroaki ^{[2
,3
]}

Miyashita, Miyo ^{[2
,3
]}

Kunii, Tetsuo ^{[2
,3
]}

Morimoto, Takuo

Inouc, Akira ^{[2
,3
]}

Ohta, Akira ^{[2
,3
]}

Katayama, Hideaki ^{[2
,3
]}

Yunouc, Norihiro

Yamanaka, Koji ^{[1
]}

Fukumoto, Hiroshi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, 5-1-1 Ofuna, Kamakura, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, High Frequency & Opt Device Works, 4-1 Mizuhara, Itami, Hyogo 6648641, Japan

[3] Mitsubishi Electr Corp, Commun Syst Ctr, 8-1-1 Tsukaguchi Honmachi, Atnagasaki, Hyogo 6618661, Japan

来源：

2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2016年

关键词：

power amplifier; GaN-HEMT; Ku-band; X-band; second harmonic reflection circuit;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two kinds of high efficiency power amplifiers (PAs) at X and Ku bands utilizing 0.15 mu m GaN HEMT technology arc presented. The 0.15 mu m GaN HEMT technology with cutoff frequency of over 40 GHz enables them to realize high RF performances at higher frequency. To provide better efficiency of the PAs, the second harmonic reflection circuits are employed at both input and output of GaN HEMT chips. The measured results show the X-band GaN HEMT PA achieved power added efficiency (PAE) of 58.6% and output power (P-out) of 30W, and the Ku-band GaN HEMT PA obtained PAE of 33% and P-out of 100W under CW operation. To the best of our knowledge, the both PAE of the X-band PA and P-out under CW operation of the Ku-band PA are state-of-the-art.

引用

页码：568 / 571

页数：4

共 37 条

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