Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

被引：10

作者：

Mazurak, Andrzej ^{[1
]}

Mroczynski, Robert ^{[1
]}

Beke, David ^{[2
,3
]}

Gali, Adam ^{[2
,3
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75, PL-00662 Warsaw, Poland

[2] Wigner Res Ctr Phys, POB 49, H-1525 Budapest, Hungary

[3] Budapest Univ Technol & Econ, Dept Atom Phys, Budafoki Ut 8, H-1111 Budapest, Hungary

来源：

NANOMATERIALS | 2020年 / 10卷 / 12期

关键词：

silicon-carbide (SiC) nanocrystals; high-k dielectric; metal– insulator– semiconductor (MIS); metal (MIM); electrical characterization; MIS STRUCTURES; QUANTUM DOTS;

D O I：

10.3390/nano10122387

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal-insulator-semiconductor and metal-insulator-metal structures based on hafnium oxide layers. The fabricated structures were characterized through the stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, switching characteristics, and retention time. The examined electrical performance of the sample structures has demonstrated the feasibility of the application of both types of structures based on SiC nanoparticles in memory devices.

引用

页码：1 / 11

页数：11

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