Perpendicular magnetic tunnel junction and its application in magnetic random access memory

被引：21

作者：

Hou-Fang, Liu ^{[1
]}

Ali, Syed Shahbaz ^{[1
]}

Xiu-Feng, Han ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 07期

基金：

中国国家自然科学基金;

关键词：

magnetic random access memory; perpendicular magnetic anisotropy; spin transfer torque effect; magnetic tunnel junction; MAGNETOCRYSTALLINE ANISOTROPY; ATOMIC LAYERS; MGO; FILMS; MAGNETORESISTANCE; REVERSAL;

D O I：

10.1088/1674-1056/23/7/077501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L1(0)-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au](N), and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.

引用

页数：9

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