Trends of structural and electrical properties in atomic layer deposited HfO2 films

被引：31
|
作者：
Scarel, G [1 ]
Spiga, S [1 ]
Wiemer, C [1 ]
Tallarida, G [1 ]
Ferrari, S [1 ]
Fanciulli, M [1 ]
机构：
[1] INFM, Lab MDM, I-20041 Agrate Brianza, Italy
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 109卷 / 1-3期
关键词：
high-kappa oxides; hafnium dioxide; atomic layer deposition;
D O I：
10.1016/j.mseb.2003.10.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Understanding and optimizing electrical and structural properties of high-kappa oxides are key steps in view of their application as SiO2 substitutes in CMOS devices. In this work, we address the effects of growth temperature (T-g,) post-deposition annealing and substrate preparation on the structural, compositional, and electrical properties of thin films (approximate to13 nm thick), deposited on p-type Si(1 0 0)/SiO2 (chemical oxide) by atomic layer deposition (ALD). In particular, we investigate the effects of: (1) different T-g (150, 250 and 350 degreesC); (2) rapid thermal annealing at 950 degreesC in N-2 for 60 s; and (3) substrate in situ heat treatment before growth and longer pulses at the beginning of the deposition. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：11 / 16
页数：6
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