Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

被引:142
|
作者
Sercombe, D. [1 ]
Schwarz, S. [1 ]
Del Pozo-Zamudio, O. [1 ]
Liu, F. [1 ,2 ]
Robinson, B. J. [3 ]
Chekhovich, E. A. [1 ]
Tartakovskii, I. I. [4 ]
Kolosov, O. [3 ]
Tartakovskii, A. I. [1 ]
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Tech Univ Dortmund, D-44221 Dortmund, Germany
[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[4] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
来源
SCIENTIFIC REPORTS | 2013年 / 3卷
基金
英国工程与自然科学研究理事会;
关键词
VALLEY POLARIZATION; PHOTOLUMINESCENCE;
D O I
10.1038/srep03489
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SixNy, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates
    D. Sercombe
    S. Schwarz
    O. Del Pozo-Zamudio
    F. Liu
    B. J. Robinson
    E. A. Chekhovich
    I. I. Tartakovskii
    O. Kolosov
    A. I. Tartakovskii
    Scientific Reports, 3
  • [2] Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
    Kim, Joonam
    Tokumitsu, Eisuke
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [3] AFM investigation of MoS2 thin films
    Belikov, A. I.
    Do Thi Nhan
    Kalinin, V. N.
    25TH INTERNATIONAL CONFERENCE ON VACUUM TECHNIQUE AND TECHNOLOGY, 2018, 387
  • [4] Electronic and optical properties of MoS2 thin films deposited by magnetron sputtering studying
    Belikov, A., I
    Phyo, Kyaw Zin
    Kalinin, V. N.
    Semochkin, A., I
    INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018, 2019, 11022
  • [5] Structure and Optical Properties of MoS2 Films Deposited by Different Methods on Glass and Silicon Substrates
    Pandey, S. K.
    Ramya, E.
    Gangwar, J. K. S.
    Kaur, Palvinder
    Kumar, Sanjeev
    Rao, D. N.
    Rao, S. M.
    ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015), 2015, 1675
  • [6] Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometry
    Yim, Chanyoung
    O'Brien, Maria
    McEvoy, Niall
    Winters, Sinead
    Mirza, Inam
    Lunney, James G.
    Duesberg, Georg S.
    APPLIED PHYSICS LETTERS, 2014, 104 (10)
  • [7] Formation and investigation of thin MoS2 films for electronics
    Samartsev, A. S.
    Phyo, Kyaw Zin
    13TH INTERNATIONAL CONFERENCE ON FILMS AND COATINGS, 2017, 857
  • [8] Optical characterization of MoS2 sputtered thin films
    Hasuike, N.
    Yamauchi, S.
    Seki, K.
    Kamoi, S.
    Nishio, K.
    Kisoda, K.
    12TH INTERNATIONAL CONFERENCE ON EXCITONIC AND PHOTONIC PROCESSES IN CONDENSED MATTER AND NANO MATERIALS (EXCON 2018), 2019, 1220
  • [9] Fabrication of MoS2 thin films on oxide-dielectric-covered substrates by chemical solution process
    Kim, Joonam
    Higashimine, Koichi
    Haga, Ken-ichi
    Tokumitsu, Eisuke
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (02):
  • [10] Properties of chemically-deposited nanocrystalline MoS2 thin films
    D. J. Sathe
    P. A. Chate
    S. B. Sargar
    S. V. Kite
    Z. D. Sande
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 3834 - 3838