Study of the quenched defects in TiAl alloy by positron annihilation

被引：0
|
作者：
Wang, BY
Zhang, SH
Wang, TM
Chang, J
机构：
[1] Department of Materials Science, Lanzhou University
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1997年 / 163卷 / 01期
关键词：
D O I：
10.1002/1521-396X(199709)163:1<33::AID-PSSA33>3.0.CO;2-H
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The recovery behavior of quenched-in defects in TiAl alloys was studied by positron annihilation lifetime measurements. The results indicate that there is a certain number of grain boundaries in fully annealed TiAl samples, and after being quenched, the samples contain quite a lot of secondary defects such as vacancy clusters besides a large amount of mono-vacancies. The vacancy clusters aggregate further in the temperature range from 300 to 600 degrees C due to the impurity atoms.
引用
收藏
页码：33 / 37
页数：5
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