13.56 MHz Class E Power Amplifier with 94.6% Efficiency and 31 Watts Output Power for RF Heating Applications

被引：0
|
作者：
Srimuang, Pattrawut [1 ]
Puangngernmak, Nutdechatorn [2 ]
Chalermwisutkul, Suramate [2 ]
机构：
[1] Civil Aviat Training Ctr, 1032-355 Phaholyothin Rd, Bangkok, Thailand
[2] King Mongkuts Univ Technol N Bangkok, Sirindhorn Int Thai German Grad Sch Engn, Bangkok, Thailand
来源：
2014 11TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING/ELECTRONICS, COMPUTER, TELECOMMUNICATIONS AND INFORMATION TECHNOLOGY (ECTI-CON) | 2014年
关键词：
Class E; Power amplifier; Laterally Diffused Metal Oxide Semiconductor (LDMOS); Power-Added Efficiency (PAE); ISM band; PARALLEL-CIRCUIT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Radio frequency power amplifiers (RF PA) are widely used for several applications e. g. wireless communication, wireless power transmission (WPT) and radio frequency heating. In general, the choice of power amplifier's operating class is based on requirements regarding linearity and power efficiency. For applications in which linearity is not a critical issue whereas high efficiency is desired, switched-mode amplifier e. g. class E is suitable. Switched-mode operation of class E offers high efficiency with a simple topology, leading to optimal costs of production and system operation. This work presents design and implementation of a high power and high efficiency 13.56 MHz class E power amplifier with parallel load circuit. As a power device, LDMOS was chosen. The fabricated class E PA provides Power-Added Efficiency (PAE) of 94.6% with 21.92 power gain when maximum output power of 44.92 dBm (31 W) is delivered to the load. Industrial, Scientific and medical (ISM) bands Class E PA with parallel load circuit.
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页数：5
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